STGB10NB37LZ n-channel clamped 10a - d 2 pak internally clamped powermesh ? igbt n polysilicon gate voltage driven n low threshold voltage n low on-voltage drop n high current capability n high voltage clamping feature n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix ot4o) description using the latest high voltage technology based on patented strip layout, sgs-thomson has designed an advanced family of igbts with outstanding performances. the built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an esd protection. applications n automotive ignition ? internal schematic diagram september 1998 1 3 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs =0) clamped v v ecr reverse battery protection 18 v v ge gate-emitter voltage clamped v i c collector current (continuous) at t c =25 o c20a i c collector current (continuous) at t c = 100 o c20a i cm ( ? ) collector current (pulsed) 60 a p tot total dissipation at t c =25 o c 125 w derating factor 0.83 w/ o c e sd esd (human body model) 4 kv t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area type v ces v ce(s at) i c STGB10NB37LZ clamped < 1.8 v 10 a d 2 pak to-263 1/8
thermal data r thj-case r thj-amb r thc-sink thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ 1.2 62.5 0.2 o c/w o c/w o c/w electrical characteristics (t j =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit bv (ces) clamped voltage i c = 2 ma v ge =0 t j =-40to150 o c 375 400 425 v bv (ecr) emitter collector break-down voltage i c =75ma v ge =0 t j =-40to150 o c 18 v bv ge gate emitter break-down voltage i c = 2ma t j =-40to150 o c 12 16 v i ces collector cut-off current (vge = 0) v ce =15v v ge =0 t j =150 o c v ce = 200 v v ge =0 t j = 150 o c 10 100 m a m a i ges gate-emitter leakage current (vce = 0) v ge = 10 v v ce =0 0.7 ma r ge gate emitter resistance 20 k w on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge i c = 250 m a t j =-40to150 o c 0.6 2.4 v v ce(sat ) collector-emitter saturation voltage v ge =4.5v i c =10a t j =25 o c v ge =4.5v i c =10a t j =-40 o c 1.2 1.3 1.8 v v i c collector current v ge =4.5v v ce =9v 20 a dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v i c = 10 a 10 18 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce =25v f=1mhz v ge = 0 1250 103 18 1700 140 25 pf pf pf q g gate charge v ce = 320 v i c =10a v ge =5v 28 nc STGB10NB37LZ 2/8
functional characteristics symbol parameter test conditions min. typ. max. unit ii latching current v clamp = 320 v v ge =5v r goff =1k w t c =125 o c 20 a u.i.s. unclamped inductive switching current functional test r goff =1 k w l =200 m ht j =125 o c r goff =1 k w l=3mh t start =55 o c 15 12 a a e as single pulse avalanche energy t start =55 o c t start =150 o c 215 150 mj mj e ar reverse avalanche energy t c =125 o c duty cycle < 1% pulse width limited by t jmax 10 mj electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 320 v i c =10a v ge =5v r g =1k w 520 340 ns ns (di/dt) on e on turn-on current slope turn-on switching losses v cc =320v i c =10a r g =1k w v ge =5v 17 180 a/ m s m j switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t f t d ( off ) e off (**) cross-over time off voltage rise time fall time off voltage delay time turn-off switching loss v clamp =320v i c =10a r ge =1k w v ge =5v 4 2.2 1.5 14.8 4.0 m s m s m s m s mj t c t r (v off ) t f t d ( off ) e off (**) cross-over time off voltage rise time fall time off voltage delay time turn-off switching loss v clamp =320v i c =10a r ge =1k w v ge =5v t j = 125 o c 5.2 2.8 2 15.8 6.5 m s m s m s m s mj ( ? ) pulse width limited by safe operating area (*) pulsed: pulse duration = 300 ms, duty cycle 1.5 % (**)losses include also the tail (jedec standardizati on) safe operating area thermal impedance STGB10NB37LZ 3/8
output characteristics normalized gate threshold voltage vs temperature collector-emitter on voltage vs temperature transfer characteristics transconductance collector-emitter on voltage vs gate-emitter voltage STGB10NB37LZ 4/8
capacitance variations off losses vs gate resistance break-down voltage vs temperature gate charge vs gate-emitter voltage off losses vs collector current clamping voltage vs gate resistance STGB10NB37LZ 5/8
fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STGB10NB37LZ 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d 2 pak) mechanical data STGB10NB37LZ 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . STGB10NB37LZ 8/8
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